may 2009 1 mitsubishi hvigbt modules CM600HG-130H high power switching use insulated type i c .................................................................. 600 a v ces ...................................................... 6500 v high insulated type 1-element in a pack aisic baseplate application t raction drives, high reliability converters / inverters, dc choppers CM600HG-130H outline drawing & circuit diagram dimensions in mm 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules hvigbt (high voltage insulated gate bipolar transistor) modules circuit diagram 64 2 53 e gc 1 +1.0 0 +1.0 0 screwing depth min. 7.7 screwing depth min. 16.5 e (5) c (6) e (3) c (4) e (1) c (2) e g c 48 38 8- 7 mounting holes 5-m8 nuts 3-m4 nuts 5 0.15 190 0.5 57 0.25 57 0.25 57 0.25 40.4 0.3 41 0.5 18 0.3 22 0.3 12 0.3 61.2 0.5 14 0.3 59.2 0.5 61.2 0.5 17 0.1 140 0.5 124 0.25 44 0.3 9 0.1 label
may 2009 2 mitsubishi hvigbt modules CM600HG-130H high power switching use insulated type 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules hvigbt (high voltage insulated gate bipolar transistor) modules maximum ratings symbol item conditions t j = ?0 c t j = +25 c t j = +125 c ratings unit v ces v ges i c i cm i e i em p c v iso v e t j t op t stg t psc collector-emitter voltage gate-emitter voltage collector current emitter current (note 2) maximum power dissipation (note 3) isolation voltage pa r tial discharge extinction voltage j unction temperature operating temperature storage temperature maximum short circuit pulse width v ge = 0v v ce = 0v, t j = 25 c dc, t c = 80 c pulse (note 1) dc pulse (note 1) t c = 25 c, igbt part rms, sinusoidal, f = 60hz, t = 1 min. rms, sinusoidal, f = 60hz, q pd 10 pc v cc = 4500v, v ce v ces , v ge = 15v, t j = 125 c 5800 6300 6500 20 600 1200 600 1200 8900 10200 5100 ?0 ~ +150 ?0 ~ +125 ?0 ~ +125 10 v v a a a a w v v c c c s electrical characteristics symbol item conditions t j = 25 c t j = 125 c 5.0 ?.5 30 6.0 124 7.6 2.2 9.9 4.50 4.60 1.20 0.35 4.50 8.20 0.50 3.10 4.30 4.00 3.60 1.00 2.40 1100 2.00 10 90 7.0 0.5 ty p limits max min unit i ces v ge(th) i ges c ies c oes c res q g v ce(sat) t d(on) t r e on(10%) t d(off) t f t f2 e off(10%) v ec t rr t rr2 q rr e rec(10%) collector cutoff current gate-emitter threshold voltage gate leakage current input capacitance output capacitance reverse transfer capacitance t otal gate charge collector-emitter saturation v oltage tu r n-on delay time tu r n-on rise time tu r n-on switching energy (note 5) tu r n-off delay time tu r n-off fall time tu r n-off fall time tu r n-off switching energy (note 5) emitter-collector voltage (note 2) reverse recovery time (note 2) reverse recovery time (note 2) reverse recovery charge (note 2) reverse recovery energy (note 2), (note 5) v ce = v ces , v ge = 0v v ce = 10 v, i c = 60 ma, t j = 25 c v ge = v ges , v ce = 0v, t j = 25 c v ce = 10 v, v ge = 0 v, f = 100 khz, t j = 25 c v cc = 3600 v, i c = 600 a, v ge = 15 v, t j = 25 c i c = 600 a (note 4) v ge = 15 v v cc = 3600 v, i c = 600 a, v ge = 15 v r g(on) = 10 ? , t j = 125 c, l s = 150 nh t (igbt_off) = 60 s (note 6) , inductive load v cc = 3600 v, i c = 600 a, v ge = 15 v r g(off) = 33 ? , t j = 125 c, l s = 150 nh inductive load i e = 600 a (note 4) v ge = 0 v v cc = 3600 v, i e = 600 a, v ge = 15 v r g(on) = 10 ? , t j = 125 c, l s = 150 nh t (igbt_off) = 60 s (note 6) , inductive load ma v a nf nf nf c v s s j/p s s s j/p v s s c j/p t j = 25 c t j = 125 c t j = 25 c t j = 125 c
may 2009 3 mitsubishi hvigbt modules CM600HG-130H high power switching use insulated type 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules hvigbt (high voltage insulated gate bipolar transistor) modules thermal characteristics symbol item conditions 6.0 14.0 22.0 ty p limits max min unit r th(j-c)q r th(j-c)r r th(c-f) thermal resistance thermal resistance contact thermal resistance j unction to case, igbt part j unction to case, fwdi part case to fin, g rease = 1w/m?, d(c-f) = 100 m k/kw k/kw k/kw mechanical characteristics symbol item conditions 7.0 3.0 1.0 600 26 56 1.35 17 0.14 15.0 6.0 3.0 ty p limits max min unit m t m s m t m cti d a d s l p ce r cc?ee mounting torque mass comparative tracking index clearance creepage distance internal inductance internal lead resistance m8: main terminals screw m6: mounting screw m4: auxiliary terminals screw t c = 25 c n? n? n? kg mm mm nh m ? note 1. pulse width and repetition rate should be such that junction temperature (t j ) does not exceed t opmax rating (125 c). 2. the symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (fwdi). 3. junction temperature (t j ) should not exceed t jmax rating (150 c). 4. pulse width and repetition rate should be such as to cause negligible temperature rise. 5. e on(10%) / e off(10%) / e rec(10%) are the integral of 0.1v ce x 0.1i c x dt. 6. t (igbt_off) definition is shown as follows. ic t (igbt_off) time
may 2009 4 mitsubishi hvigbt modules CM600HG-130H high power switching use insulated type fig. 1 ?definitions of switching times & energies of igbt part fig. 2 ?definitions of reverse recovery charge & energy of fwdi part hvigbt (high voltage insulated gate bipolar transistor) modules 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules 90%i c 10%v ge 90%v ge 90%i c 50%i c 10%i c dt di 10%i c 10%v ce 10%v ce v ce eon = ic?ce dt t2 t1 i c v cc v ge td(on) td(off) tf2 tr ton t1 t2 t3 t4 eoff = ic?ce dt tf = (0.9ic?.1ic)/(di/dt) toff = td(off)+tf t4 t3 0 0 di/dt trr dt 10%v ec v ec (v r ) 10%i e di irr trr2 t5 t6 0 qrr = ie dt t6 0 erec = ie?ec dt t6 t5 i e (i f ) 0 0
may 2009 5 mitsubishi hvigbt modules CM600HG-130H high power switching use insulated type 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules hvigbt (high voltage insulated gate bipolar transistor) modules performance curves output characteristics ( typical ) collector-emitter voltage ( v ) collector current ( a ) transfer characteristics ( typical ) gate-emitter voltage ( v ) collector current ( a ) collector-emitter saturation voltage ( v ) collector-emitter saturation voltage characteristics ( typical ) emitter-collector voltage ( v ) emitter current ( a ) free-wheel diode forward characteristics ( typical ) collector current ( a ) 1000 1200 800 600 400 200 0 0246 8 1000 1200 800 600 400 200 0 1000 1200 800 600 400 200 0 02468 1000 1200 800 600 400 200 0 6 8 4 2 0 10 12 0246 8 t j = 25 c t j = 125 c t j = 25 c t j = 125 c t j = 25 c t j = 125 c v ge = 15v v ce = 20v t j = 125 c v ge = 8v v ge = 20v v ge = 10v v ge = 12v v ge = 15v
may 2009 6 mitsubishi hvigbt modules CM600HG-130H high power switching use insulated type 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules hvigbt (high voltage insulated gate bipolar transistor) modules 10 8 6 4 2 0 0 500 1000 1500 80 10 12 6 8 2 4 0 0204060 10 2 10 3 10 1 10 0 10 0 10 -1 23 57 10 1 10 2 23 57 23 57 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 capacitance characteristics ( typical ) collector-emitter voltage ( v ) capacitance ( nf ) gate charge characteristics ( typical ) gate charge ( c ) gate-emitter voltage ( v ) collector current ( a ) switching energies ( j/p ) half-bridge switching energy characteristics ( typical ) -15 -10 -5 0 5 10 15 20 15 10 5 0 half-bridge switching energy characteristics ( typical ) gate resistor ( ? ) switching energies ( j/p ) v cc = 3600v, i c = 600a v ge = 15v, t j = 125 c inductive load 10 -1 v ce = 3600v, i c = 600a t j = 25 c e rec e off c ies c oes c res v cc = 3600v, v ge = 15v r g(on) = 10 ? , r g(off) = 33 ? t j = 125 c, inductive load e on v ge = 0v, t j = 25 c f = 100khz e rec e off e on
may 2009 7 mitsubishi hvigbt modules CM600HG-130H high power switching use insulated type 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules hvigbt (high voltage insulated gate bipolar transistor) modules zr th( j ? ) ( t ) = n i=1 i 1?xp t i t ? ? ? ? r i [k/kw] i [sec] 1 0.0059 0.0002 2 0.0978 0.0074 3 0.6571 0.0732 4 0.2392 0.4488 collector current ( a ) switching times ( s ) half-bridge switching time characteristics ( typical ) 10 -1 10 1 10 2 4 23 57 10 3 4 23 57 10 4 4 23 57 emitter current ( a ) reverse recovery time ( s ) free-wheel diode reverse recovery characteristics ( typical ) reverse recovery current ( a ) 10 3 10 4 10 2 10 1 10 1 10 2 10 0 10 -1 10 1 10 2 4 23 57 10 3 4 23 57 10 4 4 23 57 2 3 5 7 2 3 5 7 2 3 5 7 10 1 10 2 10 0 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 10 -2 10 -3 23 57 10 -1 23 57 10 0 23 57 10 1 23 57 time ( s ) transient thermal impedance characteristics normalized transient thermal impedance 1.2 1.0 0.8 0.6 0.4 0 0.2 t d(off) t d(on) t f t r v cc = 3600v, v ge = 15v r g(on) = 10 ? , r g(off) = 33 ? t j = 125 c, inductive load v cc = 3600v, v ge = 15v r g(on) = 10 ? , r g(off) = 33 ? t j = 125 c, inductive load l rr t rr r th(j?)q = 14k/kw r th(j?)r = 22k/kw
may 2009 8 mitsubishi hvigbt modules CM600HG-130H high power switching use insulated type 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules hvigbt (high voltage insulated gate bipolar transistor) modules collector-emitter voltage ( v ) collector current ( a ) reverse bias safe operating area ( rbsoa ) 1500 500 1000 0 15000 5000 10000 0 1500 500 1000 0 0 2000 4000 0 6000 8000 collector-emitter voltage ( v ) collector current ( a ) short circuit safe operating area (scsoa) 2000 4000 0 6000 8000 2000 4000 6000 8000 collector-emitter voltage ( v ) reverse recovery current ( a ) free-wheel diode reverse recovery safe operating area ( rrsoa ) v cc 4500v, di/dt 3000a/ s t j = 125 c v cc 4500v, v ge = 15v t j = 125 c, r g(off) 33 ? v cc 4500v, v ge = 15v t j = 125 c, r g(off) 33 ?
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